Optional group:
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12
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20802094 -
SUPERCONDUTTIVITA' CON APPLICAZIONI
(objectives)
To acquire a scientific background in the field of superconductivity, with emphasis on experiments, basic theoretical models, and applications. To be able to link some fundamental experiments and theoretical aspects. To be able to identify the peculiar features of superconductors that are exploited in typical applications.
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SILVA ENRICO
( syllabus)
1 Introduction to Superconductivity.
Zero resistance, persistent currents. Persistent Current Switch. Meissner effect.
Type-II and type-II superconductors. Critical fields. Fluxoid quantization. London equations.
2 Superconducting materials.
Elements. Alloys and binary compounds. Cuprates. Other superconductors.
3 Basics of the microscopic theory.
Cooper pairs, BCS coherence length, BCS fundamental state. Quasiparticles. Effects of nonzero temperature. Experimental evidences: isotopic effect, gap in the electromagnetic absorption. Depairing current.
4 Josephson effect.
Feynmann derivation. RCSJ model. dc Josephson effect. Shapiro steps. Voltage standard. SQUID; effect of a magnetic field, critical current and quantum interference. Weak screening. Applications.
5 Transport.
Two-fluid model. ac conductivity. Surface impedance. Applications: delay lines; filters; accelerating cavities.
6 Thermodynamics of the superconducting state.
Gibbs free energy. Condensation energy. Ginzburg-Landau theory. Characteristic lengths. Surface energy: type-II superconductivity.
7 Type-II superconductivity..
Fluxons or vortices. Abrikosov lattice. Lower and upper critical fields. Fluxon motion. Pinning. Irreversibility. Bean model. Flux-flow, flux-creep, TAFF.
8 Further topics.
Anisotropic superconductors. Magnetic levitation. Power applications, cables, magnets for the nuclear fusion plants.
( reference books)
THIS IS A COMPREHENSIVE LIST OF THE TEXTBOOKS WHENCE THE TOPICS ARE TAKEN. ON THE WEBSITE THE SPECIFIC CHAPTERS/PARAGRAPHS ARE LISTED. SLIDES AND SUMMARY PAPERS ARE AVAILABLE ON THE WEBSITE.
WEBSITE (AT THE TIME OF WRITING): http://webusers.fis.uniroma3.it/
[BK]
W. Buckel, R. Kleiner, "Superconductivity - Fundamentals and Applications", Wiley
[EH]
C. Enss, S. Hunklinger, "Low-Temperature Physics", Springer
[FS]
K. Fossheim, A. Sudbø, "Superconductivity - Physics and applications", John Wiley and Sons, Ltd.
[IW]
Iwasa, "Case Studies in Superconducting Magnets", 2nd Edition, Springer
[OD]
T.P. Orlando, K.A. Delin, "Foundations of Applied Superconductivity", Addison Wesley
si vedano anche le slide del corso "Applied Superconductivity" del MIT (Open CourseWare)
[OPe]
F. J. Owens, Ch. P. Poole, Jr., "Electromagnetic Absorption in the Copper Oxide Superconductors", Springer
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FIS/03
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36
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Optional group:
AD A SCELTA - (show)
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18
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20801863 -
HYPERFREQUENCY COMPONENTS
(objectives)
THE STUDENT WILL LEARN HOW TO UNDERSTAND PROPERTIES AND DESIGN OF VARIOUS MICROWAVE COMPONENTS (BOTH PASSIVE AND ACTIVE), CIRCUITS, USED IN BASIC RF/MICROWAVE FRONTEND FUNCTIONAL BLOCKS AND LEARN HOW TO APPLY THESE PROPERTIES FOR PARTICULAR DESIGNS. THE STUDENT WILL LEARN HOW TO DESIGN BASIC RF/MICROWAVE FRONTEND FUNCTIONAL BLOCKS USING BOTH ANALYTICAL TOOLS AND ADVANCED COMPUTER-AIDED DESIGN TOOLS. THE STUDENT WILL, THROUGH THE LAB SESSIONS, DEVELOP AN INTUITION AND PHYSICAL FEELING FOR MICROWAVE PHENOMENON AND TO GET FIRST HANDS-ON EXPERIENCE WITH MICROWAVES COMPONENTS AND EQUIPMENT.
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Derived from
20801863 COMPONENTI A IPERFREQUENZE in INGEGNERIA DELLE TECNOLOGIE DELLA COMUNICAZIONE E DELL'INFORMAZIONE (DM 270) LM-27 TOSCANO ALESSANDRO
( syllabus)
PART 1 - Transmission lines, Matching, Smith chart, Narrowband microwave networks, Small reflection theory, Wideband microwave networks, Binomial impedance transformer and Chebyshev impedance transformer, Matrix representation of microwave networks, Matrix ABCD, Impedance and admittance matrices, Scattering matrix and relationships with other matix representations
PART 2 - Scattering matrix [S] of a N-port network, Properties of a component from [S]: Reciprocity, Matching and Lossless, Unitary matrix condition, Analysis of a microwave network from its scattering matrix, Analysis of a microwave component with not-matched ports, Signal flow representation of the scattering matrix
PART 3 - 3-port networks, Analysis of e 3-port network, Microwave circulators, [S] matrices of a circulator, Operation of a circulator, Analysis and Design of a Circulator, Power dividers, [S] matrix of a power divider, Proprieties of a power divider, Junction dividers, Lossy dividers, Wilkinson dividers, Mode analysis of a Wilkinson divider, Balanced and Unbalanced power dividers, 2-port power dividers, N-port power dividers, Design of a power divider for microwave applications
PART 4 - 4-port networks, Analysis of a 4-port network, Directional Couplers (DC), Types of Directional couplers (Symmetric, Antisymmetric, Hybrid), Proprieties and parameters of a DC, Waveguide Directional Couplers: Bethe Hole Coupler, Double Bethe Hole Coupler, Multi hole Bethe Coupler, Coupled Lines Directional Couplers, Theory of coupled lines, Hybrid Directional couplers, Quadrature Hybrid Couplers: Mode analysis and design, Rat-race Hybrid: Mode analysis and Design
PART 5 - Analysis and design of microwave filters, Matching networks for microwave amplifiers, Introduction to the analysis and design of metamaterial-based microwave components
( reference books)
David Pozar, Microwave engineering 4th Edition
S.J. Orfanidis, Electromagnetic Waves and Antennas
I Bahl and P. Bhartia, Microwave solid state circuit design
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9
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ING-INF/02
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54
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Core compulsory activities
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20801926 -
ELECTRONICS OF SOLID STATE DEVICES
(objectives)
THE COURSE IS DESIGNED TO ILLUSTRATE THE OPERATION OF MAJOR SEMICONDUCTOR DEVICES BASED ON HOMO AND HETEROJUNCTIONS; THEIR CONNECTION TO THE OUTSIDE WORLD, THE FORMATION OF OHMIC AND SCHOTTKY CONTACTS USED IN MICRO AND NANOELECTRONICS. THE STUDENT WILL STUDY THE CHARACTERISTICS AT LOW AND HIGH FREQUENCY OF MESFET, MOSFET, BJT, HBT, AND THOSE MOST ADVANCED STRUCTURES USING QUANTUM CONFINEMENT OF CHARGE CARRIERS AS HEMT, PHEMT AND MODFET BASED ON GAAS / ALGAAS E GAN / ALGAN. .
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CONTE GENNARO
( syllabus)
1. Physics of Semiconductors. Materials for electronics. Band structure and general properties. Group IV semiconductors, III-V and II-VI. Alloys. Amorphous and polycrystalline semiconductors. Intrinsic carriers. Conductivity. Doping. Mobility and factors affecting it. Phenomena of non-equilibrium. Fick's equation: diffusion. Diffusion/Drift of the charge carriers. Recombination and generation. Theory SHR with a single trap level.
- The equation of continuity of electrons and holes. Boundary conditions. Poisson equation. Einstein relationship. Quasi-Fermi levels. Mathematical model of a semiconductor.
- Ramo Theorem. Photoconductivity. Photoresistors. Photoconductive gain.
2. Bipolar devices. The pn junction. Static characteristics. Forward and reverse bias. Excess carriers profile. Drift and diffusion current. The Shockley ideal diode. Electrostatic p+n junction. Potential and electric field. Dynamic characteristics. Transition capacity. A mathematical model for the diode. Quality factor. Temperature coefficient. The prototype transistor. Transistors for switching and amplification devices. Vertical and lateral devices. Npn and pnp BJT. The BJT as switch and amplifier. Current gain. Gummel’s number. Early effect. Kirk effect.
- The pn junction in the light. The pin and avalanche photodiode. Spectral response.
- Electroluminescence. Radiative and non-radiative transitions. Luminescence efficiency. Device architectures. LED for IR and UV-VIS.
- Heterojunction: the junction GaAs-Ge. Bands alignment. Anderson Theory. The ideal transistor. HBT Npn-heterojunction. Thermionic-Diffusive model.
3. Unipolar Devices. The metal-semiconductor barrier. The Schottky diode. Work function and electron affinity. I-V characteristic. Ohmic contact. Surface charge and the Debye length. M-S Junction electrostatics. Thermionic current. Drift-diffusion current. Barrier lowering: Schottky effect. Non-uniform doping.
- JFET and MESFET. Channel resistance. Input characteristics: IDS vs VGS. Trans-characteristic. Trans-conductance, Channel conductance. The JFET as a signal amplifier. Dynamic behavior. Small signal model. Frequency behavior and fT.
- Metal-Oxide-Semiconductor structures. The MIS diode. MOS system capacitance. Interface states. - MOSFET: gradual channel approssimation. NMOS, PMOS and CMOS. Depletion and enrichment devices. Subthreshold current. Geometric effects. Scaling laws.
Elements of micro/nano-electronic technologies
Silicon growth and purification. Doping by diffusion. Doping by implantation. Metals deposition: evaporation and sputtering. Photolithography. Reactive Ion Etching. Silicon oxidation. Epitaxy. BJT, NMOS, CMOS and BiCMOS technologies.
( reference books)
D.A. Neamen - Semiconductor Physics and Devices, 3rd Ed., McGraw-Hill, 2003.
R.S Muller, T.I. Kamins - Device Electronics for Integrated Circuits, 3rd Ed., John Wiley, 2009
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9
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ING-INF/01
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72
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Core compulsory activities
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20802122 -
Sensors and transducers
(objectives)
The aim of the course is to describe the principles of operation of the main ultrasonic sensors and transducers. They will be provided to students the basic knowledge of the acousto-electronic, in order to give the tools for the analysis and simulation of transduction systems. Particular emphasis will be given to the capacitive micromachined transducers on silicon, which represent the state of the art of the microsensors integrated technology. During the course there is a part of practice in the laboratory.
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CALIANO GIOSUE'
( syllabus)
The course will cover the following topics:
• Introduction
• Elements of Acoustics
• Equation of the plane wave, spherical wave
• Reflection and refraction of the wave
• Concept of acoustic impedance
• Impedance of radiation
• Main applications of ultrasound (distance measuring, echographic systems, acoustic microscope, etc.).
• Piezoelectric transducers: theory and technology
• CMUT transducers: theory of operation
• CMUT transducers: technology
• Characterization and measurements of ultrasonic transducers
( reference books)
• Notes and lecture notes from lessons
• Kino, “Acoustic waves: devices, imaging and analog signal processing”
• Kinsler, Frey, Coppers, Sanders “Fundamentals of acoustics”
• Morse, Ingard, “Theoretical acoustics”
• Beranek, “Acoustics measurements”
• J. W. Gardner: “Microsensors: Principles and applications”, J. Wiley & Sons.
• Piezoelectric and Acoustic Materials for Transducer Applications, edited by Ahmad Safari, E. Koray Akdogan - ISBN 978-0-387-76538-9 , 2008 Springer Science
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ING-INF/01
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36
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Core compulsory activities
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Università Roma Tre