Università Roma Tre

Metal-Semiconductor junction. The Schottky diode. Work function and electronic affinity. Ideal I-V curve. Ohmic contact. Surface charge and Debye length. Transport inside the SCR. Thermionic current. Drift-diffusion components. Schottky effect. Charge carriers in the SCR: evaluation of Nd and Vbi. Uniform doping. Metal-n+-n eteroface.
Charge transport mechanisms in dielectric and semiconductor materials. Point defects and electronic states. Frenkel-Poole and Poole effect. Child-Langmuir law. Space charge limited current (SCLC regime). Fowler-Nordheim current. Impedance Spectroscopy. Applications: characterization of thin oxides; polycrystalline materials; silicon nanowires.
Unipolar devices: JFET e MESFET. Channel resistance. iDS  VGS trans-characteristic. iDS  VDS. Transconductance, gm. Channel conductance, gd. The JFET used as a signal amplifier. MESFET static and dynamic response. Gradual channel model. Small signal model. Series resistance effects. Deviations from ideality. Field dependent charge mobility.
Metal-Oxide-Semiconductor structures. MIS diode. Overall capacitance. Thermal equilibrium analysis. Interface states. Charge inside the oxide. MOS electronics. Frequency dependent diode’s capacitance. Depletion and enrichment mode MOSFET. Threshold voltage. Characteristic parameters. Charge control model. Channel modulation. Floating gate MOSFET. FAMOS. CMOS. Latch-up. Geometrical effects of miniaturization: Sub-threshold currents. Hot carriers. Scale law. Pspice model.

S. M. Sze, K. K. Ng - Physics of Semiconductor Devices, 3rd ed., Wiley
Transparencies projected during the course
Bibliographic references proposed for further study