Università Roma Tre

1. Physics of Semiconductors. Materials for electronics. Band structure and general properties. Group IV semiconductors, III-V and II-VI. Alloys. Amorphous and polycrystalline semiconductors. Intrinsic carriers. Conductivity. Doping. Mobility and factors affecting it. Phenomena of non-equilibrium. Fick's equation: diffusion. Diffusion/Drift of the charge carriers. Recombination and generation. Theory SHR with a single trap level.
- The equation of continuity of electrons and holes. Boundary conditions. Poisson equation. Einstein relationship. Quasi-Fermi levels. Mathematical model of a semiconductor.
- Ramo Theorem. Photoconductivity. Photoresistors. Photoconductive gain.

2. Bipolar devices. The pn junction. Static characteristics. Forward and reverse bias. Excess carriers profile. Drift and diffusion current. The Shockley ideal diode. Electrostatic p+n junction. Potential and electric field. Dynamic characteristics. Transition capacity. A mathematical model for the diode. Quality factor. Temperature coefficient. - The pn junction in the light. The pin and avalanche photodiode. Spectral response.
- Electroluminescence. Radiative and non-radiative transitions. Luminescence efficiency. Device architectures. LED for IR and UV-VIS.
- Heterojunction: the junction GaAs-Ge. Bands alignment. Anderson Theory. The ideal transistor. HBT Npn-heterojunction. Thermionic-Diffusive model.

3. Unipolar Devices. The metal-semiconductor barrier. The Schottky diode. Work function and electron affinity. I-V characteristic. Ohmic contact. Surface charge and the Debye length. M-S Junction electrostatics. Thermionic current. Drift-diffusion current. Barrier lowering: Schottky effect. Non-uniform doping.
- JFET and MESFET. Channel resistance. Input characteristics: IDS vs VGS. Trans-characteristic. Trans-conductance, Channel conductance. The JFET as a signal amplifier. Dynamic behavior. Small signal model. Frequency behavior and fT.
- Metal-Oxide-Semiconductor structures. The MIS diode. MOS system capacitance. Interface states. - MOSFET: gradual channel approssimation. NMOS, PMOS and CMOS. Depletion and enrichment devices. Subthreshold current. Geometric effects. Scaling laws.

R.S Muller, T.I. Kamins - Device Electronics for Integrated Circuits, 3rd Ed., John Wiley, 2009