Teaching - Università Roma Tre

NANOELECTRONICS (objectives)

Code

20801913

Language

ITA

Type of certificate

Profit certificate

Credits

6

Scientific Disciplinary Sector Code

ING-INF/01

Contact Hours

36

Type of Activity

Core compulsory activities

Teacher	ROSSI MARIA CRISTINA (syllabus) Low dimension Field effect transitor Nanometric MOSFET: balistic transport 2D Confined Nanostructures Bandgap enginering Semiconductor Heterostructures: bandgap enginering Anisotype heterojunction: potentia barriers Electron Tunneling through a potential barrier Double barrier tunneling and resonant tunneling Potential well I Quantization of energetic levels and density of states Devices based on 2D nanostructures Resonant tunneling diodes Space charge confinement in isotype heterojunction 2D electron (hole) gas formation High electron mobility transistor (HEMT) SiGe, AlGaAs and AlGaM HEMT Quantum well devices 2D Nanomaterials Nanostructured surfaces Porous silicon Graphene Realization technology of 2D nanostructure 1D nanostrucures Nanowires: Energy level quantization and density of states 1D nanomaterials Carbon nanotubes Electronic and Optoelectronic properties of carbon nanotubes Nanotube based devices 0D nanostructures Quantum dots: Energy level quantization and density of states Nanoparticles Coulomb blocade effecs Devices based on 0D structures Single electron transistor and its applicatios Realization technology of 0D nanostructure (reference books) LECTURE SLIDES M. DRAGOMAN, D. DRAGOMAN “NANOELECTRONICS, PRINCIPLE AND DEVICES”, HARTECH HOUSE, 2009.
Dates of beginning and end of teaching activities	From 01/03/2017 to 09/06/2017
Delivery mode	Traditional
Attendance	not mandatory
Evaluation methods	Oral exam