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Luciana Di Gaspare is currently Associate Professor at the Roma Tre University, working in the research group of Physics and Technology of Semiconductors of the Department of Sciences. Academic qualifications 1992- PhD in Physics at the La Sapienza University of Rome;1989-Laurea degree with laude in Physics at the La Sapienza University of Rome. Institutional roles Member of the Permanent Didactic Commission in Optics and Optometry Member of the Commission for Orientation of the Department of Sciences Teaching Activities Luciana DI Gaspare has been in charge of the following academic courses: Physics of nanostructures, General Physics 1 for Geology, Laboratory of calculus for optics, Vision optics, Condensed Matter Physics, Atomic and Molecular Physics. She has tutored and co-tutored students working on their BSc, MSc, and PhD thesis. Research activity: The research activity has been focused on different fields of condensed matter physics, producing innovative contribution in fields such as epitaxial growth of high quality IV-IV semiconductor heterostructures by Chemical Vapor Deposition, quantum transport study in low dimensional devices, optical, electronic and structural properties of semiconductor interfaces and heterostructures by photoemission spectroscopies and diffraction techniques, graphene on Ge systems. She has a relevant expertise in the field of project and development of CVD growth apparatus. From 2000 her research activity is mainly related on the growth of SiGe/Si heterostructures by UHV-CVD for the realization of quantum wells, 2DEGs, nanodevices as well as on the study of their optical and magnetotransport properties. In the last 4 years the activity has been focused on the growth of SiGe heterostructures at high Ge content and on their structural and optical characterizations for the development of a Si based quantum cascade laser operating in the THz range. A parallel research field developed recently concerns the CVD growth of Graphene on Ge, activity devoted to the study of the impact of growth temperature, CH4 precursor flux and Ge substrate orientation on the quality of the graphene film.